Today, the National Innovation Centre for Third Generation Semiconductor Technology Development Strategy Seminar and the First Expert Committee Meeting kicked off in Suzhou Industrial Park, where representatives from academia and industry gathered to discuss how to better play the supporting role of the National Innovation Centre for Third Generation Semiconductor Technology during the Fourteenth Five-Year Plan period, and to continue to enhance the industry's innovation capability and international competitiveness. Innovation capacity and international competitiveness and other issues.

Academician of the Chinese Academy of Sciences, National Third Generation Semiconductor Technology Innovation Centre Director Hao Yue, academician of the Chinese Academy of Sciences, Jiang Feng Yi, academician of the Chinese Academy of Engineering Ouyang Xiaoping, academician of the Chinese Academy of Sciences, Yang Deren and dozens of domestic third-generation semiconductor field of top technical and industrial experts online and offline to participate in the Provincial Science and Technology Department of the second level of the inspector Jing Mao, the park party committee members, deputy director of the management committee Ni Qian and other attending the meeting.

Since 2006, the park has been developing the third-generation semiconductor industry, and now it has become one of the regions with the highest concentration of third-generation semiconductor industry resources and the best degree of industrialisation in China, with 53 upstream and downstream enterprises, forming a complete industrial chain with ‘equipment and auxiliary materials-substrate epitaxy-devices’ as the core and ‘downstream applications’ as the support. It has formed a complete industrial chain with ‘equipment, auxiliary materials, substrate, epitaxial and device’ as the core and ‘downstream application’ as the support, attracted more than 10 national key talents to innovate and start business in the park, and built a number of public service platforms, such as processing platform, testing and analysis platform and encapsulation platform.

National Innovation Centre for Third Generation Semiconductor Technology (Suzhou) (hereinafter referred to as ‘National Innovation Centre’) was approved by the Ministry of Science and Technology in March 2021 to support the construction of the third generation semiconductor technology, aiming at the national strategic needs, focusing on the third generation of semiconductor materials in the field of semiconductor lighting, new types of displays, power electronics, the ‘dual-carbon’ goal, focusing on solving the third generation of semiconductor materials in the field of semiconductor lighting, new displays, power electronics. ‘goal, focusing on the third generation of semiconductor materials in the field of semiconductor lighting, new display, power electronics ‘dual-carbon, focusing on solving the third generation of semiconductor materials in the high-voltage resistance, high power density, high energy efficiency, high bandwidth frequency and other characteristics of the demand for the growth of materials, process technology, research and development of equipment, and the development of a number of subversive technologies to promote China's third-generation semiconductors in a number of industries to achieve the international leader. Over the past two years, the National Innovation Centre has introduced three teams of academicians and nearly 20 high-level talents, and set up core research teams in three fields, including laser display. Material growth platform, test and analysis platform to enhance the ability to serve enterprises and research institutes more than 100. Implemented three key R&D programmes above the provincial level, and made breakthroughs in some key common technical indicators. Nine joint R&D centres have been set up in cooperation with universities, institutes and science and technology enterprises, focusing on national strategic needs to carry out collaborative research. It has set up a 300 million yuan angel fund and organised a series of academic activities to provide strong support for industry-university-research cooperation and the transformation of scientific and technological achievements. Guochuang Centre has formed the first technical expert committee composed of more than 60 top experts and experts, and issued letters of appointment to some experts at the meeting.

Since 2006, the park has been developing the third-generation semiconductor industry, and now it has become one of the regions with the highest concentration of third-generation semiconductor industry resources and the best degree of industrialisation in China, with 53 upstream and downstream enterprises, forming an integrated semiconductor industry with ‘equipment and auxiliary materials - substrate and epitaxial - devices’ as the core and ‘downstream applications’ as the support. It has formed a complete industrial chain with ‘equipment, auxiliary materials, substrate, epitaxial and device’ as the core and ‘downstream application’ as the support, attracted more than 10 national key talents to innovate and start business in the park, and built a number of public service platforms, such as processing platform, testing and analysis platform and encapsulation platform.

National Innovation Centre for Third Generation Semiconductor Technology (Suzhou) (hereinafter referred to as ‘National Innovation Centre’) was approved by the Ministry of Science and Technology in March 2021 to support the construction of the third generation semiconductor technology, aiming at the national strategic needs, focusing on the third generation of semiconductor materials in the field of semiconductor lighting, new types of displays, power electronics, the goal of the ‘double carbon’, focusing on solving the third generation of semiconductor materials in the field of semiconductor lighting, new displays, power electronics. ‘goal, focusing on the third generation of semiconductor materials in the field of semiconductor lighting, new display, power electronics ‘dual-carbon, focusing on solving the third generation of semiconductor materials in the high-voltage resistance, high power density, high energy efficiency, high bandwidth frequency and other characteristics of the demand for the growth of materials, process technology, research and development of equipment, and the development of a number of subversive technologies, to promote China's third-generation semiconductor industry in a number of industries to achieve the international leader. Over the past two years, the National Innovation Centre has introduced three teams of academicians and nearly 20 high-level talents, and set up core research teams in three fields, including laser display. Material growth platform, test and analysis platform to enhance the ability to serve enterprises and research institutes more than 100. Implemented three key R&D programmes above the provincial level, and made breakthroughs in some key common technical indicators. Nine joint R&D centres have been set up in cooperation with universities, institutes and science and technology enterprises, focusing on national strategic needs to carry out collaborative research. It has set up a 300 million yuan angel fund and organised a series of academic activities to provide strong support for industry-university-research cooperation and the transformation of scientific and technological achievements. NCC has formed the first technical expert committee composed of more than 60 top experts and experts, and issued letters of appointment to some experts at the meeting.